| PART |
Description |
Maker |
| CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory
512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON Semiconductor
|
| TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56
Intel StrataFlash Memory (J3)
Strata Flash Memory 256M
256M Strata Flash Memory
|
NUMONYX
Intel Corporation
|
| MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
(MB84VA2100 / MB84VA2101) 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| AM29LV160MB70RPCI AM29LV160MT85WAI AM29LV160MB90EI |
Flash Memory IC 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
|
Spansion, Inc.
Advanced Micro Devices
|
| E28F004B5T60 E28F004B5T80 28F200B5 E28F400B5B60 E2 |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2/ 4/ 8 MBIT
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2 / 4 / 8 MBIT
Dual-Slot, PCMCIA Analog Power Controller
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 1M X 8 FLASH 5V PROM, 90 ns, PDSO48
DIRECTIONAL COUPLER, 20DB, SMT 256K X 8 FLASH 5V PROM, 70 ns, PDSO48
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 1M X 8 FLASH 5V PROM, 80 ns, PDSO48
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| MB84VA2007-10 MB84VA20 MB84VA2006 MB84VA2006-10 MB |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| EN29LV641H EN29LV641L EN29LV641L-70TCP EN29LV641L- |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
|
Eon Silicon Solution Inc.
|
| MB84VA2005-10 MB84VA20 MB84VA2004 MB84VA2004-10 MB |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28
8K X 8 STANDARD SRAM, 55 ns, CDIP28
32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory
64 Mb (4M x 16) Boot Sector, Flash Memory
SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
|
Maxim Integrated Products, Inc.
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
